HIGH PERFORMANCE SOI/Cu SRAMs AND MEMORIES IN MICROPROCESSORS

نویسندگان

  • R. V. Joshi
  • S. Kang
  • C. T. Chuang
  • G. Shahidi
چکیده

This paper describes applications of Silicon on Insulator (SOI) technology to high performance onchip memories (e.g. SRAMs and register files etc.).The primary focuses are on the important and unique issues in SOI technology such as performance gain, history effect, power reduction, pulsewidth control and self-heating. The effects on the interconnect performance and reliability are also discussed. The hardware data show that Partially Depleted (PD) SOI technology results in 2025% and 18-22% improvement in the performance over bulk cmos using 0.25μm and 0.18μm technology nodes respectively. Power reduction of 7% to 8% over bulk technology is realized. Selfheating in SOI can cause device and interconnect temperatures to rise more than 10-12C.

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تاریخ انتشار 2001