HIGH PERFORMANCE SOI/Cu SRAMs AND MEMORIES IN MICROPROCESSORS
نویسندگان
چکیده
This paper describes applications of Silicon on Insulator (SOI) technology to high performance onchip memories (e.g. SRAMs and register files etc.).The primary focuses are on the important and unique issues in SOI technology such as performance gain, history effect, power reduction, pulsewidth control and self-heating. The effects on the interconnect performance and reliability are also discussed. The hardware data show that Partially Depleted (PD) SOI technology results in 2025% and 18-22% improvement in the performance over bulk cmos using 0.25μm and 0.18μm technology nodes respectively. Power reduction of 7% to 8% over bulk technology is realized. Selfheating in SOI can cause device and interconnect temperatures to rise more than 10-12C.
منابع مشابه
Low Power SRAMs for Battery Operation
In recent years, a growing class of personal computing devices has emerged includingportable desktops, digital pens, and new audioand video-based multimedia products.Other new products include wireless communications and imaging systems such as personaldigital assistants, personal communicators and smart cards. These devices and systemsdemand high-speed, high-throughput computat...
متن کاملMHz 2 T 1 C Embedded DRAM Macro in a Generic Logic Process with No Boosted Supplies
6T SRAMs have been the embedded memory of choice for modern microprocessors due to their logic compatibility, high speed, and refresh-free operation. The relatively large cell size and conflicting requirements for read and write at low operating voltages make aggressive scaling of 6T SRAMs challenging in sub22nm. Recently, 1T1C embedded DRAMs (eDRAMs) have replaced SRAMs in several server appli...
متن کاملLow Power and High Performance SRAM-based Architecture for TCAM...V.Gopinath et al.,
Ternary content addressable memories (TCAMs) perform high-speed lookup operation but when compared with static random access memories (SRAMs), TCAMs have certain limitations such as low storage density, relatively slow access time, low scalability, complex circuitry, and are very expensive. Thus, can we use the benefits of SRAM by configuring it (with additional logic) to enable it to behave li...
متن کاملTest and Reliability of Magnetic Random Access Memories
Magnetic Random Access Memories (MRAMs) are “Spintronics” devices that store data in Magnetic Tunnel Junctions (MTJs) and have high data processing speed, low power consumption and high integration density compared with FLASH memories. Also, MRAM offers relative large Tunnel Magneto Resistance (TMR) at room temperature and it is compatible with Complementary Metal Oxide Semiconductor (CMOS) pro...
متن کاملTomorrows High-Quality SoCs Require High-Quality Embedded Memories Today
Embedded memories increasingly dominate SoC designs -whether chip area, performance, power consumption, manufacturing yield or design time are considered. ITRS data indicate that the embedded memory contents of ICs may increase from 20% in 1999 to 90% at the SOnm node by the end of the decade. Therefore, even more than today, the success of tomorrow's SoC design will depend on the availability ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2001